✦ LIBER ✦

TEM analysis of InGaAs/InAlAs epitaxial layers grown over InP patterned substrates

✍ Scribed by F. Peiro; A. Cornet; J.R. Morante; K. Zekentes; A. Georgakilas

Book ID: 119125409
Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 942 KB
Volume: 21
Category: Article
ISSN: 0167-577X
DOI: 10.1016/0167-577x(94)90243-7

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High-resolution X-ray diffraction of mol

High-resolution X-ray diffraction of molecular-beam-epitaxy-grown InAlAs/InGaAs/InAlAs three-layer structures on (001)-oriented InP substrates

✍ Brühl, H.-G. ;Poecker, A. ;Nickel, H. ;Lösch, R. ;Schlapp, W. 📂 Article 📅 1993 🏛 International Union of Crystallography 🌐 English ⚖ 469 KB

SIMS analysis of InP, GaAs and InGaAs la

SIMS analysis of InP, GaAs and InGaAs layers grown by chemical beam epitaxy

✍ Y. Gao; S. Godefroy; J. L. Benchimol; F. Alaoui; F. Alexandre; K. Rao 📂 Article 📅 1990 🏛 John Wiley and Sons 🌐 English ⚖ 364 KB

## Abstract SIMS analysis was applied to the characterization of InP, GaAs and InGaAs grown by chemical beam expitaxy (CBE). It includes the control of purity and doping, and the determination of growth rate and matrix composition. Some important characteristics of CBE growth, such as carbon incorp

TEM investigation of modulated structure

TEM investigation of modulated structures and ordered structures in InAlAs crystals grown on (001) InP substrates by molecular beam epitaxy

✍ O. Ueda; T. Fujii; Y. Nakada; H. Yamada; I. Umebu 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 392 KB

Transmission electron microscopic evalua

Transmission electron microscopic evaluation of InGaAs/InAlAs in-plane superlattices grown on slightly misoriented (110) InP substrates by molecular beam epitaxy

✍ Osamu Ueda; Yoshiaki Nakata; Atsushi Takeuchi; Satoshi Nakamura; Shunichi Muto 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 403 KB

Effect of surface steps and nonstoichiom

Effect of surface steps and nonstoichiometry on critical thickness of strained InGaAs layers grown by molecular beam epitaxy on InAlAs/InP heterostructures

✍ Gendry, M.; Drouot, V.; Hollinger, G.; Mahajan, S. 📂 Article 📅 1995 🏛 American Institute of Physics 🌐 English ⚖ 342 KB

Influence of mismatch of the lattice par

Influence of mismatch of the lattice parameters on the structural, optical, and transport properties of InGaAs layers grown by molecular beam epitaxy on InP(100) substrates

✍ A. E. Zhukov; A. Yu. Egorov; V. M. Ustinov; A. F. Tsatsul’nikov; M. V. Maksimov; 📂 Article 📅 1997 🏛 Springer 🌐 English ⚖ 87 KB