Target poisoning during reactive sputtering of silicon with oxygen and nitrogen
โ Scribed by M.M. Waite; S. Ismat Shah
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 488 KB
- Volume
- 140
- Category
- Article
- ISSN
- 0921-5107
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๐ SIMILAR VOLUMES
The oxidation behavior of bidirectional silicon carbide-based composites is studied in the temperature range from 900-1200ยฐC under an oxygen pressure equal to 1 kPa. The composite consists of siiicon-based fibers, separated from the Sic matrix by a pyrolytic carbon layer (SiOCiSiC). Oxidation was ca
WO x films were prepared by reactive dc magnetron sputtering using tungsten target. Sputtering was carried out at a total pressure of 1.2 Pa using a mixture of argon plus oxygen in an effort to determine the influence of the oxygen partial pressure on structural and optical properties of the films.