โ Scribed by R. Galloni; L. Favero; A.M. Mazzone; G. Lulli; F. Zignani; L. Morettini
No coin nor oath required. For personal study only.
Phosphorus ions were implanted into silicon single crystals at 10 keV under channelling conditions; this was followed by a 40 keV random implantation to obtain tailored emitters for solar cells. The implanted layers were annealed either by using an electron gun especially designed to perform heat treatments on semiconductor materials or by furnace treatments at 650 or 750 ยฐC for 30 min. Electrical activity profiles, spectral response and cell and diode current-voltage characteristics were measured, and a one-dimensional computer model was used to correlate the cell's performance with the physical characteristics of the emitter layers; profile tailoring and residual damage after annealing were specifically analysed.
๐ SIMILAR VOLUMES
PolycrystaUine silicon (Wacker-SILSO) solar cells have been made by phosphorus implantation in combination with pulsed excimer laser annealing or thermal annealing. It was found that laser annealing yields cells with a short-circuit current which is 3% -4% higher than that obtained by thermal anneal