Tailored emitter ion-implanted silicon s
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R. Galloni; L. Favero; A.M. Mazzone; G. Lulli; F. Zignani; L. Morettini
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Article
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1984
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Elsevier Science
β 888 KB
Phosphorus ions were implanted into silicon single crystals at 10 keV under channelling conditions; this was followed by a 40 keV random implantation to obtain tailored emitters for solar cells. The implanted layers were annealed either by using an electron gun especially designed to perform heat tr