Tackling the plasma etch villains
β Scribed by Mike Cooke
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 563 KB
- Volume
- 18
- Category
- Article
- ISSN
- 0961-1290
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π SIMILAR VOLUMES
The etching mechanism of (Bi 4Γx La x )Ti 3 O 12 (BLT) thin films in Ar/Cl 2 inductively coupled plasma (ICP) and plasmainduced damages at the etched surfaces were investigated as a function of gas-mixing ratios. The maximum etch rate of BLT thin films was 50.8 nm/min of 80% Ar/20% Cl 2 . From vario
We derive for the fast time a mechanism of reactive plasma etch-mg in the system Si/F by the quantum-chemical approach. Sii-'+ic species at the surface play an important role. Sil'3 surface compleses also occur. The final etching braduct Siiy4 is formed with high probability in the gas phase.