Run-to-run control of a plasma etch process for 8 inch diameter silicon wafers at Digital Semiconductor is determined by maintenance of targeted values of post-etch metrology variables. The post-etch quality variables are extremely sensitive to variation in the etch chamber conditions due to fluctua
The adaptation of turbomolecular pumps to plasma etching processes
β Scribed by J Henning
- Publisher
- Elsevier Science
- Year
- 1984
- Tongue
- English
- Weight
- 459 KB
- Volume
- 34
- Category
- Article
- ISSN
- 0042-207X
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π SIMILAR VOLUMES
We derive for the fast time a mechanism of reactive plasma etch-mg in the system Si/F by the quantum-chemical approach. Sii-'+ic species at the surface play an important role. Sil'3 surface compleses also occur. The final etching braduct Siiy4 is formed with high probability in the gas phase.
THE BAs[(' ])ROCESS. The process of dephosphorizing iron in the Bessemer converter, held in this country under patents of Thomas, Snelus and Riley, is called, by common consent, the J3asic Process. Ill the ordinary Bessemer operation, when the flame "drops," as observed by the naked eye, or when th