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Quantum-chemical approach to the elementary steps of plasma etching

✍ Scribed by Dieter K. Fricke; Hans Müller; Ch. Opitz

Publisher: Elsevier Science
Year: 1983
Tongue: English
Weight: 311 KB
Volume: 94
Category: Article
ISSN: 0009-2614
DOI: 10.1016/0009-2614(83)80759-3

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✦ Synopsis

We derive for the fast time a mechanism of reactive plasma etch-mg in the system Si/F by the quantum-chemical approach. Sii-'+ic species at the surface play an important role. Sil'3 surface compleses also occur. The final etching braduct Siiy4 is formed with high probability in the gas phase.

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