Systematic investigation on the effect of contact resistance on the performance of a-IGZO thin-film transistors with various geometries of electrodes

✍ Scribed by Lee, Jae Sang ;Chang, Seongpil ;Bouzid, Houcine ;Koo, Sang-Mo ;Lee, Sang Yeol

• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 287 KB
• Volume: 207
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200983753

✦ Synopsis

Abstract

We demonstrate the influence of the contact resistance on the electrical properties of a‐IGZO thin‐film transistors (TFTs) with ZrO~2~ gate insulator grown by rf‐magnetron sputtering at room temperature by adopting various channel widths and lengths. These TFTs have all been processed at room temperature with the same channel W/L ratio (W/L = 5) but different channel widths (50, 150, 250, and 350 µm). As the channel width increases from 50 to 350 µm, the on‐current and field effect mobility increase from 0.7 to 1 mA and 19 to 31 cm^2^/V s, respectively. However, the subthreshold swing decreases from 0.37 to 0.19 V/decade. These results show that the contact resistance strongly affects the device performances and should be considered in these applications.