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Effect of curing conditions of a poly(4-vinylphenol)gate dielectric on the performance of a pentacene-based thin film transistor

✍ Scribed by Minkyu Hwang; Hwa Sung Lee; Yunseok Jang; Jeong Ho Cho; Shichoon Lee; Do Hwan Kim; Kilwon Cho


Publisher
The Polymer Society of Korea
Year
2009
Tongue
English
Weight
346 KB
Volume
17
Category
Article
ISSN
1598-5032

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## Abstract We demonstrate the influence of the contact resistance on the electrical properties of a‐IGZO thin‐film transistors (TFTs) with ZrO~2~ gate insulator grown by rf‐magnetron sputtering at room temperature by adopting various channel widths and lengths. These TFTs have all been processed a