Effect of modifying a methyl siloxane-based dielectric by a polymer thin film for pentacene thin-film transistors
β Scribed by Sang-Il Shin; Jae-Hong Kwon; Jung-Hoon Seo; Byeong-Kwon Ju
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 585 KB
- Volume
- 254
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
We report on the fabrication of ultraviolet (UV)-sensing top-gate ZnO thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP) polymer gate dielectric on glass substrate. Our top-gate ZnO-TFT showed a field-effect mobility of 0.05 cm 2 /V s, maximum saturation current of 0.11 A at a gate bias of
prober from SΓSS in a dark environment. An Att/Huber unichiller and a temperature controller were used to set the temperature between 293 K to 423 K. At each temperature step thermal equilibrium was awaited before starting the measurements.