Boron-and silicon-doped carbon clusters of the type BmC . (m = 1-4) and Si,,C, (m = 1, 2) have been produced via the laser-vaporization cluster beam technique. The observed features of the intensity distribution in mass spectra suggest that B atoms can be incorporated into the clusters with much hig
Synthesis and characterization of boron-doped carbons
β Scribed by William Cermignani; Thomas E. Paulson; Carina Onneby; Carlo G. Pantano
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 779 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0008-6223
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β¦ Synopsis
Two methods have been employed to prepare boron-doped carbon materials. One method utilized ion implantation to dope the surface region of vitreous carbon with up to 12 atomic % boron. The other method used CVD to prepare -1-2 micron thick carbon coatings with various boron contents (0 to 15 atomic o/o). The quantitative compositional analysis of these materials was performed with the electron microprobe and ion microprobe. Graphitization and redistribution of the boron, due to heat treatment, was examined with SIMS depth profiling and X-ray diffraction. Primarily, X-ray pholoelectron spectroscopy (XPS) was used to characterize the bonding state of boron before and after heat treatment and oxidation. It was found that boron could accommodate as many as five different chemical structures in the CVD carbon films. Some of these were identified as mixed B-O and B-C species c c (e.g., 'B' or 0, ,o B b i ), and one corresponded to the BC3 type of bonding reported by Kaner. Most interestingly, oxidation caused boron segregation at the surface and shifted the bonding environment of these boron atoms to lower binding energy (less local electron density).
π SIMILAR VOLUMES
Abst~ct-3oron-doped carbons were prepared at temperatures from 1000 to 28CWC. The effect of boron doping on the thermal conductivity of carbons has been studied and discussed with the results from Raman scattering. Boron doping above 2200Β°C depressed the thermal conductivity of carbons and increased
Nanocrystalline boron nitride (BN) with a whisker-like morphology has been synthesized from the reaction of KBH 4 and NH 4 Cl at a temperature of 6503C and a pressure of about 22 MPa. The pressure is much lower than that of previous routes and the yield of nanocrystalline BN reached 70%. X-ray powde