Two methods have been employed to prepare boron-doped carbon materials. One method utilized ion implantation to dope the surface region of vitreous carbon with up to 12 atomic % boron. The other method used CVD to prepare -1-2 micron thick carbon coatings with various boron contents (0 to 15 atomic
8. ESR in carbons: Studies of boronation and of sodium doping
β Scribed by S Mrozowski
- Publisher
- Elsevier Science
- Year
- 1968
- Tongue
- English
- Weight
- 135 KB
- Volume
- 6
- Category
- Article
- ISSN
- 0008-6223
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Boron-and silicon-doped carbon clusters of the type BmC . (m = 1-4) and Si,,C, (m = 1, 2) have been produced via the laser-vaporization cluster beam technique. The observed features of the intensity distribution in mass spectra suggest that B atoms can be incorporated into the clusters with much hig
Abst~ct-3oron-doped carbons were prepared at temperatures from 1000 to 28CWC. The effect of boron doping on the thermal conductivity of carbons has been studied and discussed with the results from Raman scattering. Boron doping above 2200Β°C depressed the thermal conductivity of carbons and increased