Two methods have been employed to prepare boron-doped carbon materials. One method utilized ion implantation to dope the surface region of vitreous carbon with up to 12 atomic % boron. The other method used CVD to prepare -1-2 micron thick carbon coatings with various boron contents (0 to 15 atomic
Production and characterization of boron- and silicon-doped carbon clusters
β Scribed by Takumi Kimura; Toshiki Sugai; Hisanori Shinohara
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 366 KB
- Volume
- 256
- Category
- Article
- ISSN
- 0009-2614
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β¦ Synopsis
Boron-and silicon-doped carbon clusters of the type BmC . (m = 1-4) and Si,,C, (m = 1, 2) have been produced via the laser-vaporization cluster beam technique. The observed features of the intensity distribution in mass spectra suggest that B atoms can be incorporated into the clusters with much higher efficiency than Si atoms. The mass spectral evidence is also consistent with the idea that SiC,(n >~ 30) and BC,(n >~ 30) clusters have a silicon-and boron-heterofullerene structure, respectively.
π SIMILAR VOLUMES
Some symmetrical clusters of carbon andboron are discussed by introducing the new concept of conjugate polyhedra; we obtain the results that if a polyhedron of carbon (boron) is given, its conjugate polyhedron of boron (carbon) can be obtained by interchange of n and fwith 1 being kept constant, and
## Abstract Silicon crystals grown with the Czochralski method are still the most common material used for the production of electronic devices. In recent years, a growing need of large diameter crystals with increasingly higher doping levels is observed, especially to support the expanding market
## Abstract Theoretical studies on BC~__n__~ (__n__=1β6) clusters are carried out using density functional theory, MΓΈllerβPlesset secondβorder perturbation theory (MP2), coupledβcluster calculations including up to triple excitations (CCSD(T)), and higherβlevel approaches. All possible isomers depe
An experimental technique that produces, mass-resolves, and isolates both positive ond negarive clusier ions is described. Cluster ions of from 1 LO greater than 50 atoms have been observed in carbon and silicon. This apparatus does rwr cnnverr neural clusrcrs 10 ions via a secondary ionizing agent