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Swift heavy ion irradiation induced luminescence from C-doped SiO2 films

✍ Scribed by Z.G Wang; Y.F Jin; E.Q Xie; Z.Y Zhu; M.D Hou; X.X Chen; Y.M Sun; Q.X Zhang

Book ID
114165998
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
107 KB
Volume
193
Category
Article
ISSN
0168-583X

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Structural modification of C-doped SiO2
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✍ Z.G. Wang; Z.M. Zhao; A. Benyagoub; M. Toulemonde; F. Levesque; Y. Song; Y.F. Ji πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 388 KB

Thermally grown amorphous SiO 2 samples were implanted at room temperature (RT) with 120 keV C-ions to a dose ranging from 1.0 β€’ 10 16 to 8.6 β€’ 10 17 C ions/cm 2 , then irradiated at RT with 950 MeV Pb, 345 or 1754 MeV Xe ions to a fluence in the region from 1.0 β€’ 10 11 to 3.8 β€’ 10 12 ions/cm 2 , re