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Photoluminescence from C+-implanted SiO2 films after swift heavy ion irradiations

✍ Scribed by Z.G. Wang; J. Liu; Z.Y. Zhu; Y.F. Jin; E.Q. Xie; T.W. Zhu; X.X. Chen; Y.M. Sun; M.D. Hou

Book ID
114165690
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
110 KB
Volume
191
Category
Article
ISSN
0168-583X

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Thermally grown amorphous SiO 2 samples were implanted at room temperature (RT) with 120 keV C-ions to a dose ranging from 1.0 β€’ 10 16 to 8.6 β€’ 10 17 C ions/cm 2 , then irradiated at RT with 950 MeV Pb, 345 or 1754 MeV Xe ions to a fluence in the region from 1.0 β€’ 10 11 to 3.8 β€’ 10 12 ions/cm 2 , re