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Photoluminescence from high-energy heavy ion irradiated C-doped SiO2 thin films

โœ Scribed by Z.G Wang; E.Q Xie; Y.F Jin; X.X Chen; C.L Liu; Z.Y Zhu; M.D Hou; Y.M Sun; J Liu; Y.B Wang


Book ID
114164765
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
89 KB
Volume
179
Category
Article
ISSN
0168-583X

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Structural modification of C-doped SiO2
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Thermally grown amorphous SiO 2 samples were implanted at room temperature (RT) with 120 keV C-ions to a dose ranging from 1.0 โ€ข 10 16 to 8.6 โ€ข 10 17 C ions/cm 2 , then irradiated at RT with 950 MeV Pb, 345 or 1754 MeV Xe ions to a fluence in the region from 1.0 โ€ข 10 11 to 3.8 โ€ข 10 12 ions/cm 2 , re