We have investigated the ion beam mixing in the metal/semiconductor (Cu/Ge) system under swift heavy ion irradiation. For this study the samples have been prepared by electron gun evaporation in ultrahigh vacuum deposition system. The irradiations were performed at room temperature (RT) using 100 Me
Swift heavy ion beam mixing in Mo/Si system
โ Scribed by D. Bhattacharya; G. Principi; A. Gupta; D.K. Avasthi
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 345 KB
- Volume
- 244
- Category
- Article
- ISSN
- 0168-583X
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