Swift heavy ions induced mixing in metal/semiconductor system

✍ Scribed by Sarvesh Kumar; R.S. Chauhan; D.C. Agarwal; Manvendra Kumar; A. Tripathi; W. Bolse; D.K. Avasthi

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 553 KB
• Volume: 266
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2008.01.068

✦ Synopsis

We have investigated the ion beam mixing in the metal/semiconductor (Cu/Ge) system under swift heavy ion irradiation. For this study the samples have been prepared by electron gun evaporation in ultrahigh vacuum deposition system. The irradiations were performed at room temperature (RT) using 100 MeV Ag ions, 120 MeV and 140 MeV Au ions and at liquid nitrogen temperature (LT) using 120 MeV, 350 MeV Au ions with fluences ranging from 1 Â 10 13 to 2.7 Â 10 14 ions/cm 2 . Characterizations of these samples have been performed using Rutherford backscattering spectroscopy (RBS) and atomic force microscopy (AFM). On analyzing the RBS data, we find that mixing occurs at the interface and it increases with the fluence, electronic energy loss and irradiation temperature. The mixing in this case is due to interdiffusion across the interface during a transient melt phase according to the thermal spike model.