๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Surfactant mediated growth of MnSi1.7 layers on (001)Si

โœ Scribed by A. Mogilatenko; M. Falke; S. Teichert; H. Hortenbach; G. Beddies; H.-J. Hinneberg

Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
670 KB
Volume
64
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.

โœฆ Synopsis

This study reports on transmission electron microscopy investigations of higher manganese silicide (HMS) layers grown by molecular beam epitaxy (MBE) on (001)Si using the surfactant mediated reactive deposition technique. Applying Sb as a surfactant (surface active substances) results in an increased silicide island density as well as in a change in the crystalline orientation of the silicide islands. The silicide islands were found to grow into the Si matrix. The preferential epitaxial relationship was determined to be (100)[010]Mn Si uu

๐Ÿ“œ SIMILAR VOLUMES

Electron microscopic investigation of Mn
Electron microscopic investigation of MnSi1.7 layers on Si(001)
โœ A Mogilatenko; M Falke; S Teichert; S Schwendler; D.K Sarkar; H.-J Hinneberg ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 886 KB

Semiconducting higher manganese silicides (HMS) with a composition near that of MnSi are of special 1.7 interest due to their thermoelectric properties. We report on the growth of HMS layers deposited by MBE using the template technique. In particular the influence of the template thickness on the s

Surfactant-mediated growth of TiSi2 on S
Surfactant-mediated growth of TiSi2 on Si(001)
โœ H Hortenbach; M Falke; S Teichert; G Beddies; H.-J Hinneberg ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 384 KB

We report on the growth of thin titanium silicide layers on Si(001) by surfactant-mediated reactive deposition (SMRD) at temperatures in the range of 300-800 8C. The surface diffusion of Ti and Si is crucial for the morphology of the growing silicide layer and can be altered by the presence of a sur

Preparation and properties of MnSi1.7 on
Preparation and properties of MnSi1.7 on Si(001)
โœ S. Teichert; D.K. Sarkar; S. Schwendler; H. Giesler; A. Mogilatenko; M. Falke; G ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 286 KB

The most rich silicon silicides of manganese, the group of higher manganese silicides (HMS), have the composition MnSi x with x in the range from 1.67 to 1.75. This material group with a tetragonal crystal structure shows semiconducting electronic properties, with promising application in thermoelec