𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Surfactant-mediated growth of TiSi2 on Si(001)

✍ Scribed by H Hortenbach; M Falke; S Teichert; G Beddies; H.-J Hinneberg

Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
384 KB
Volume
64
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.

✦ Synopsis

We report on the growth of thin titanium silicide layers on Si(001) by surfactant-mediated reactive deposition (SMRD) at temperatures in the range of 300-800 8C. The surface diffusion of Ti and Si is crucial for the morphology of the growing silicide layer and can be altered by the presence of a surfactant (here Sb). Samples prepared with and without Sb were analysed by SEM, RBS, TEM and XRD. The results show that the phase of the growing silicide is not influenced by the surfactant. For temperatures higher than 400 8C, the C49-disilicide phase was found. The SEM investigations show that the pinhole density in the TiSi layer is significantly 2 reduced by the surfactant.

πŸ“œ SIMILAR VOLUMES

Surfactant mediated growth of MnSi1.7 la
Surfactant mediated growth of MnSi1.7 layers on (001)Si
✍ A. Mogilatenko; M. Falke; S. Teichert; H. Hortenbach; G. Beddies; H.-J. Hinneber πŸ“‚ Article πŸ“… 2002 πŸ› Elsevier Science 🌐 English βš– 670 KB

This study reports on transmission electron microscopy investigations of higher manganese silicide (HMS) layers grown by molecular beam epitaxy (MBE) on (001)Si using the surfactant mediated reactive deposition technique. Applying Sb as a surfactant (surface active substances) results in an increase

Transmission electron microscopy investi
Transmission electron microscopy investigation of the formation of C54–TiSi2 phase on stressed (001)Si
✍ S.L. Cheng; S.M. Chang; H.Y. Huang; L.J. Chen; C.J. Tsai πŸ“‚ Article πŸ“… 2002 πŸ› Elsevier Science 🌐 English βš– 256 KB

The effects of stress on the formation of C54Β±TiSi 2 phase in Ti/(001)Si samples have been investigated by high-resolution transmission electron microscopy in conjunction with auto-correlation function (ACF) analysis. The C54Β±TiSi 2 phase transformation temperature in tensily stressed samples was fo