This study reports on transmission electron microscopy investigations of higher manganese silicide (HMS) layers grown by molecular beam epitaxy (MBE) on (001)Si using the surfactant mediated reactive deposition technique. Applying Sb as a surfactant (surface active substances) results in an increase
Electron microscopic investigation of MnSi1.7 layers on Si(001)
โ Scribed by A Mogilatenko; M Falke; S Teichert; S Schwendler; D.K Sarkar; H.-J Hinneberg
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 886 KB
- Volume
- 60
- Category
- Article
- ISSN
- 0167-9317
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โฆ Synopsis
Semiconducting higher manganese silicides (HMS) with a composition near that of MnSi are of special 1.7 interest due to their thermoelectric properties. We report on the growth of HMS layers deposited by MBE using the template technique. In particular the influence of the template thickness on the structure and morphology of MnSi films on (001)Si substrates was investigated. It was found that there is an optimal template thickness 1.7 that causes preferred epitaxial growth of the major amount of the silicide. Three different epitaxial orientation relations of the silicide crystals to the substrate were observed. Considering the specific features of the electron diffraction patterns of MnSi the HMS phase was identified as Mn Si .
๐ SIMILAR VOLUMES
The most rich silicon silicides of manganese, the group of higher manganese silicides (HMS), have the composition MnSi x with x in the range from 1.67 to 1.75. This material group with a tetragonal crystal structure shows semiconducting electronic properties, with promising application in thermoelec