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Effect of the growth temperature on the RHEED pattern of thin Ge layers on Si(001)−2 × 1 surface

✍ Scribed by C. Tatsuyama; T. Terasaki; H. Obata; T. Tanbo; H. Ueba


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
449 KB
Volume
115
Category
Article
ISSN
0022-0248

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Optical second-harmonic generation has been used to determine the sticking probability for dissociative adsorption of HZ and D2 on Si( 100)2x 1 as a function of surface temperature. The initial sticking coefficient increases from 10e8 at 550 K to 10e5 at 1OOOK. It shows an activated behaviour as a f