We report on the growth of thin titanium silicide layers on Si(001) by surfactant-mediated reactive deposition (SMRD) at temperatures in the range of 300-800 8C. The surface diffusion of Ti and Si is crucial for the morphology of the growing silicide layer and can be altered by the presence of a sur
โฆ LIBER โฆ
Surfactant-mediated growth of indium on GaAs(001)
โ Scribed by S. Schintke; U. Resch-Esser; N. Esser; A. Krost; W. Richter; B.O. Fimland
- Book ID
- 117217213
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 787 KB
- Volume
- 377-379
- Category
- Article
- ISSN
- 0039-6028
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