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Surface structure and composition of β- and 6H-SiC

✍ Scribed by R. Kaplan


Publisher
Elsevier Science
Year
1989
Weight
61 KB
Volume
215
Category
Article
ISSN
0167-2584

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## Abstract 4H‐SiC bipolar junction transistors (BJTs) are one of the promising candidates for next‐generation power devices. 4H‐SiC BJTs have the advantages of low on‐resistance and high temperature capability. On the other hand, high common emitter current gain is required from a practical use po