𝔖 Bobbio Scriptorium
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Surface regrowth of implantation damaged Ge(111)

✍ Scribed by G Petö; E Kótai; J Kanski


Book ID
103469241
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
184 KB
Volume
41
Category
Article
ISSN
0042-207X

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Electron transparent Si, Ge and GaP samples were implanted with 50 keV Xe + ions to a dose around 10 11 ions/cm 2 . At this implantation condition, each heavy ion created a small, spatially isolated amorphous zone. Following the ion implantation, the samples were irradiated with electrons having ene