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Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures

✍ Scribed by A. Domanowska; M. Miczek; R. Ucka; M. Matys; B. Adamowicz; J. Żywicki; A. Taube; K. Korwin-Mikke; S. Gierałtowska; M. Sochacki


Book ID
116245217
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
703 KB
Volume
258
Category
Article
ISSN
0169-4332

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Al 2 O 3 /SiO 2 films have been deposited as UV antireflection coatings on 4H-SiC by electron-beam evaporation and characterized by reflection spectrum, scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The reflectance of the Al 2 O 3 /SiO 2 films is 0.33% and 10 times l