Al2O3/SiO2 films prepared by electron-beam evaporation as UV antireflection coatings on 4H-SiC
✍ Scribed by Feng Zhang; Huili Zhu; Weifeng Yang; Zhengyun Wu; Hongji Qi; Hongbo He; Zhengxiu Fan; Jianda Shao
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 205 KB
- Volume
- 254
- Category
- Article
- ISSN
- 0169-4332
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✦ Synopsis
Al 2 O 3 /SiO 2 films have been deposited as UV antireflection coatings on 4H-SiC by electron-beam evaporation and characterized by reflection spectrum, scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The reflectance of the Al 2 O 3 /SiO 2 films is 0.33% and 10 times lower than that of a thermally grown SiO 2 single layer at 276 nm. The films are amorphous in microstructure and characterize good adhesion to 4H-SiC substrate. XPS results indicate an abrupt interface between evaporated SiO 2 and 4H-SiC substrate free of Si-suboxides. These results make the possibility for 4H-SiC based high performance UV optoelectronic devices with Al 2 O 3 /SiO 2 films as antireflection coatings.