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Surface, interface and bulk properties of GaAs(111)B treated by Se layers

โœ Scribed by Feng, P X; Riley, J D; Leckey, R C G; Pigram, P J; Seyller, T; Ley, L


Book ID
120502604
Publisher
Institute of Physics
Year
2001
Tongue
English
Weight
156 KB
Volume
34
Category
Article
ISSN
0022-3727

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Comparison of GaN Buffer Layers Grown on
โœ Kumagai, Y. ;Murakami, H. ;Seki, H. ;Koukitu, A. ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 104 KB ๐Ÿ‘ 1 views

Comparison of low-temperature (LT-) GaN buffer layers grown on GaAs {111} surfaces has been performed. LT-GaN buffer layers of 0-160 nm thickness were grown simultaneously both on GaAs (111)A and (111)B surfaces by metalorganic hydrogen chloride vapor phase epitaxy (MOHVPE) at 550 C. On GaAs (111)A