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Atomic layer epitaxy of GaAs and GaAsxP1 − x on nominally oriented GaAs(111) substrates with high quality surface and interfaces

✍ Scribed by Jeong-Sik Lee; Sohachi Iwai; Hideo Isshiki; Takashi Meguro; Takuo Sugano; Yoshinobu Aoyagi


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
391 KB
Volume
160
Category
Article
ISSN
0022-0248

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