LPE Growth of GaInAsP/InP Heterostructur
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Ing. Dr. Sc. J. Novotný; O. Procházková
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Article
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1992
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John Wiley and Sons
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English
⚖ 488 KB
## LPE Growth of GaInAsP/InP Heterostructures for 1.3 pm Planar Buried Mesa Lasers LPE heterostructure growth processes devised to prepare GaInAsP/InP planar buried mesa ridge (PBMR) lasers are described. A combination of supercooling and two-step cooling regimes of LPE was used to grow InGaAsP/In