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Surface-emitting lasers of low-threshold 1.3-μm GaInAsP/InP circular planar-buried heterostructure

✍ Scribed by Toshihiko Baba; Yukiaki Yogo; Katsumasa Suzuki; Fumio Koyama; Kenichi Iga


Book ID
112078858
Publisher
John Wiley and Sons
Year
1994
Tongue
English
Weight
856 KB
Volume
77
Category
Article
ISSN
8756-663X

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📜 SIMILAR VOLUMES


LPE Growth of GaInAsP/InP Heterostructur
✍ Ing. Dr. Sc. J. Novotný; O. Procházková 📂 Article 📅 1992 🏛 John Wiley and Sons 🌐 English ⚖ 488 KB

## LPE Growth of GaInAsP/InP Heterostructures for 1.3 pm Planar Buried Mesa Lasers LPE heterostructure growth processes devised to prepare GaInAsP/InP planar buried mesa ridge (PBMR) lasers are described. A combination of supercooling and two-step cooling regimes of LPE was used to grow InGaAsP/In