Ultra-low-threshold, high-bandwidth, very-low noise operation of 1.52 μm GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD

✍ Scribed by Krakowski, M.; Rondi, D.; Talneau, A.; Combemale, Y.; Chevalier, G.; Deborgies, F.; Maillot, P.; Richinn, P.; Blondeau, R.; D'Auria, L.; de Gremoux, B.

• Book ID: 117867652
• Publisher: IEEE
• Year: 1989
• Tongue: English
• Weight: 709 KB
• Volume: 25
• Category: Article
• ISSN: 0018-9197
• DOI: 10.1109/3.29267