✦ LIBER ✦

Preparation and characterisation of GaInAsP/InP double-heterostructure wafers and lasers for the 1.3μm wavelength range

✍ Scribed by GÃ¶bel, E.; Gottsmann, H.; Herzog, H.J.; Marschall, P.; Schlosser, E.; Schurr, E.A.

Book ID: 114446072
Publisher: Institution of Electrical Engineers
Year: 1979
Weight: 364 KB
Volume: 3
Category: Article
ISSN: 0308-6968
DOI: 10.1049/ij-ssed:19790037

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Growth and characterisation of GaInAsP/I

Growth and characterisation of GaInAsP/InP double heterostructure material for stripe-geometry lasers emitting near 1.3μm

✍ Hersee, S.D.; Carter, A.C.; Goodfellow, R.C.; Hawkins, G.; Griffith, I. 📂 Article 📅 1979 🏛 Institution of Electrical Engineers ⚖ 1006 KB

Surface-emitting lasers of low-threshold

Surface-emitting lasers of low-threshold 1.3-μm GaInAsP/InP circular planar-buried heterostructure

✍ Toshihiko Baba; Yukiaki Yogo; Katsumasa Suzuki; Fumio Koyama; Kenichi Iga 📂 Article 📅 1994 🏛 John Wiley and Sons 🌐 English ⚖ 856 KB

LPE Growth of GaInAsP/InP Heterostructur

LPE Growth of GaInAsP/InP Heterostructures for 1.3 μm Planar Buried Mesa Lasers

✍ Ing. Dr. Sc. J. Novotný; O. Procházková 📂 Article 📅 1992 🏛 John Wiley and Sons 🌐 English ⚖ 488 KB

## LPE Growth of GaInAsP/InP Heterostructures for 1.3 pm Planar Buried Mesa Lasers LPE heterostructure growth processes devised to prepare GaInAsP/InP planar buried mesa ridge (PBMR) lasers are described. A combination of supercooling and two-step cooling regimes of LPE was used to grow InGaAsP/In

Investigation of spontaneous and coheren

Investigation of spontaneous and coherent radiation in the 3–4μm wavelength range in an InGaAsSb/AlGaSbAs laser heterostructure

✍ E. A. Grebenshchikova; O. G. Ershov; B. E. Zhurtanov; A. N. Imenkov; N. M. Kolch 📂 Article 📅 1997 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 56 KB

Analysis of facet reflectivity, mirror l

Analysis of facet reflectivity, mirror loss, single-transverse mode condition and beam divergence angle at 1.3 μm and 1.55 μm wavelength of InGaAsP/InP buried heterostructure semiconductor laser diodes

✍ H. Ghafouri-Shiraz 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 695 KB

Electroluminescence and photoconductivit

Electroluminescence and photoconductivity of GeSi heterostructures with self-assembled islands in the wavelength range 1.3–1.55 μm

✍ D.N. Lobanov; A.V. Novikov; K.E. Kudryavtsev; A.N. Yablonskiy; A.V. Antonov; Yu. 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 406 KB