Optical and structural properties of sil
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Shih-Liang Ku; Cheng-Chung Lee
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Article
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2010
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Elsevier Science
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English
โ 484 KB
Silicon nitride (SiN x ) films were prepared by ion-assisted deposition process. The films were analyzed by measurement of scanning electron microscopy (SEM), Fourier transform infrared spectrometry (FTIR), Xray photoelectron spectrometry, spectrophotometer, and ellipsometer measurements. The effect