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Surface and contact properties of GaN produced from GaAs

✍ Scribed by Dr. rer. nat. habil. H. Nieke; Dipl.-Phys. K. J. Rennert; A. Thoma

Publisher
John Wiley and Sons
Year
1976
Tongue
English
Weight
260 KB
Volume
11
Category
Article
ISSN
0232-1300

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✦ Synopsis

Abstract

Samples of some thickness and extent showed fine cracks on the brink already after oxidization in Ga~2~O~3~ which became more distinctive after nitriding into GaN. Current‐voltage characteristics were recorded from different long nitrided samples with contacts of In, Sn, Sb, and Te. The long nitrided samples had a lower resistance. Some of the samples showed hysteresis effects with characteristics similar to varistors.

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Band offsets and properties of AlGaAs/Ga
Band offsets and properties of AlGaAs/GaAs and AlGaN/GaN material systems
✍ A.J Ekpunobi; A.O.E Animalu πŸ“‚ Article πŸ“… 2002 πŸ› Elsevier Science 🌐 English βš– 74 KB

We have calculated band offsets of AlGaAs/GaAs and AlGaN/GaN systems using the recently reformulated tight binding method. The valence band offset (VBO) of the Al 0.2 Ga 0.8 As/GaAs system was obtained as 0.03 eV in agreement with the experimental value of 0.03 eV. The VBO for Al x Ga 1-x N/GaN is p