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Sulfur diffusion into GaAs/Ga0.7Al0.3As heterostructures for device applications

✍ Scribed by H. Nishi

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Characteristics of Gated GaAs/Al0.3Ga0.7

✍ Abd-El Mongy, A. ;Belal, A.A.E. ;Ali, K. ;Long, A.R. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 180 KB 👁 1 views

Diffusion of zinc into gaas through Al0.

✍ Hoi-Jun Yoo; Young-Se Kwon 📂 Article 📅 1988 🏛 Springer US 🌐 English ⚖ 302 KB

Zn diffusion in Al0.7Ga0.3As compared wi

✍ A. Flat; A.G. Milnes; D.L. Feucht 📂 Article 📅 1977 🏛 Elsevier Science 🌐 English ⚖ 172 KB

A quasianalytical model for LT–GaAs and

✍ Rapeta V. V. V. J. Rao; T. C. Chong; L. S. Tan; W. S. Lau; J. J. Liou 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 216 KB 👁 1 views

Device linearity comparisons between dop

✍ Ming-Ta Yang; Yi-Jen Chan 📂 Article 📅 1996 🏛 IEEE 🌐 English ⚖ 655 KB

Role of Si-doped Al0.3Ga0.7As layers in

✍ I. L. Drichko; A. M. D’yakonov; I. Yu. Smirnov; Yu. M. Gal’perin; V. V. Preobraz 📂 Article 📅 2004 🏛 Springer 🌐 English ⚖ 156 KB