✦ LIBER ✦

Substrate misorientation dependence of thermal stability of Si atom in Si atomic layer doped GaAs on GaAs(111)A

✍ Scribed by M. Hirai; H. Ohnishi; K. Fujita; T. Watanabe

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Si doping and MBE growth of GaAs on tilt

✍ M. Shigeta; Y. Okano; H. Seto; H. Katahama; S. Nishine; K. Kobayashi; I. Fujimot 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 310 KB

Diffusion of Si-acceptor in δ-doped GaAs

✍ M. Hirai; H. Ohnishi; K. Fujita; P. Vaccaro; T. Watanabe 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 389 KB

Effect of carbon on the thermal stabilit

✍ Masaki Fujiu; Kazuya Takahashi; Masao Sakuraba; Junichi Murota 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 136 KB

A study of the defect structure in GaAs

✍ G. Aragón; S.I. Molina; F.J. Pacheco; Y. González; L. González; F. Briones; R. G 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 917 KB

Distribution of interfacial As atoms in

✍ H.C. Lee; H. Ishiwara; S. Furukawa; K. Saiki; A. Koma 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 542 KB

Orientation dependence of S, Zn, Si, Te,

✍ R. Bhat; C. Caneau; C.E. Zah; M.A. Koza; W.A. Bonner; D.M. Hwang; S.A. Schwarz; 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 482 KB