✦ LIBER ✦
Distribution of interfacial As atoms in the electron-beam exposure and epitaxy (EBE-epitaxy) technique for growing GaAs films on CaF2/Si(111) structures
✍ Scribed by H.C. Lee; H. Ishiwara; S. Furukawa; K. Saiki; A. Koma
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 542 KB
- Volume
- 41-42
- Category
- Article
- ISSN
- 0169-4332
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