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Substrate instability during the LPE growth of (Ga, In) As alloys on InAs substrates

✍ Scribed by M.G. Astles; O.D. Dosser; A.J. MacLean; P.J. Wright


Publisher
Elsevier Science
Year
1981
Tongue
English
Weight
806 KB
Volume
54
Category
Article
ISSN
0022-0248

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Growth dynamics of GaAs, AlAs and (Al, G
✍ B. A. Joyce; J. H. Neave; M. R. Fahy; K. Sato; D. M. Holmes; J. G. Belk; J. L. S πŸ“‚ Article πŸ“… 1996 πŸ› Springer US 🌐 English βš– 816 KB

The growth dynamics of GaAs, AlAs and (AI, Ga)As films grown by molecular beam epitaxy (MBE) on GaAs (11 0) and (1 11)Asubstrates have been studied using reflection high energy electron diffraction (RHEED) intensity oscillations and scanning tunnelling microscopy (STM). In contrast to growth on (0 0