Substrate current characteristics of Si N- and PMOST's at 4.2 K
β Scribed by E. Simoen; C. Claeys
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 179 KB
- Volume
- 82
- Category
- Article
- ISSN
- 0038-1098
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π SIMILAR VOLUMES
This paper reports on the substrate current (1,) characteristics of partially depleted silicon-on-insulator (SOI) n-MOSFETs at 4.2, 77 and 300 K. It is demonstrated that, to a good approximation, the same model as for bulk MOSFETs can be used to describe the gate and drain voltage dependence of le i
The phosphorcsccncc spectrum of xdnthonc cmbeddcd in a polycrystallinc matrix of n-hcxanc has been measured at 77 and 4.2 K. Dramatic diffcrcnccs in spectral features and triplet lifetime arc evident at these two tempcraturcs. The cmitting species at 4.2 K is assigned as predominantly 3(zz\*) in cha