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Substrate bias dependence of Raman spectra for TiN films deposited by filtered cathodic vacuum arc

✍ Scribed by Cheng, Y. H.; Tay, B. K.; Lau, S. P.; Kupfer, H.; Richter, F.


Book ID
118254495
Publisher
American Institute of Physics
Year
2002
Tongue
English
Weight
324 KB
Volume
92
Category
Article
ISSN
0021-8979

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## Abstract High‐quality titanium nitride (TiN) films with nano‐structure were prepared at ambient temperature on (111) silicon substrates by filtered cathodic arc plasma (FCAP) technology with an in‐plane β€œS” filter. The effects of substrate bias and argon flux on the crystal grain size, roughness