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Submicrometer Si and Si-Ge epitaxial-base double-poly self-aligned bipolar transistors

✍ Scribed by Chen, T.C.; Ganin, E.; Stork, H.; Meyerson, B.; Cressler, J.D.; Warnock, J.; Harame, D.; Patton, G.; Li, G.P.; Chuang, C.T.; Ning, T.H.

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