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Self-aligned Ti germanosilicide formation on a polycrystalline Si/SiGe/Si extrinsic base for SiGe heterojunction bipolar transistors

✍ Scribed by Seung-Yun Lee; Chan Woo Park; Jin-Yoeng Kang

Book ID: 107452920
Publisher: Springer US
Year: 2003
Tongue: English
Weight: 402 KB
Volume: 32
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-003-0035-0

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