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A 30-Gbit/s demultiplexer IC based on Si/SiGe emitter base heterojunction bipolar transistors

โœ Scribed by Schreiber, H.-U.; Saxarra, M.; Geppert, W.


Book ID
114537751
Publisher
IEEE
Year
1999
Tongue
English
Weight
118 KB
Volume
46
Category
Article
ISSN
0018-9383

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Effect of Ge content and profile in the
โœ Mukul K. Das; N. R. Das; P. K. Basu ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 217 KB

In this paper, the effects of Ge content and profile shape on the performance of a SiGe-based heterojunction bipolar transistor (HBT) are investigated. The common-emitter current gain, the early voltage, and the transit time of SiGe HBTs are calculated and computed for different Ge profiles as well