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A 60-GHz fT super self-aligned selectively grown SiGe-base (SSSB) bipolar transistor with trench isolation fabricated on SOI substrate and its application to 20-Gb/s optical transmitter ICs

✍ Scribed by Sato, F.; Hashimoto, T.; Tezuka, H.; Soda, M.; Suzaki, T.; Tatsumi, T.; Tashiro, T.


Book ID
114537767
Publisher
IEEE
Year
1999
Tongue
English
Weight
766 KB
Volume
46
Category
Article
ISSN
0018-9383

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