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Si/Gex Si1−x heterojunction bipolar transistors formed by Ge ion implantation in Si. Narrowing of band gap and base width

✍ Scribed by S. Lombardo; C. Spinella; S.U. Campisano; A. Pinto; P. Ward

No coin nor oath required. For personal study only.

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Band-gap narrowing and high-frequency ch

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Characterization of SiGexSi1 − x heteroj

✍ S. Lombardo; V. Raineri; R. Portoghese; S.U. Campisano; A. Pinto; G. La Rosa; P. 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 386 KB