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Band-gap narrowing and high-frequency characteristics of Si/GexSi1-x heterojunction bipolar transistors formed by Ge ion implantation in Si

✍ Scribed by Lombardo, S.A.; Privitera, V.; Pinto, A.; Ward, P.; La Rosa, G.; Campisano, S.U.

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Si/Gex Si1−x heterojunction bipolar tran

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