✦ LIBER ✦

Study on the growth rate in VPE of GaN

✍ Scribed by W. Seifert; G. Fitzl; E. Butter

Publisher: Elsevier Science
Year: 1981
Tongue: English
Weight: 347 KB
Volume: 52
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(81)90201-3

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effects of NH3 on the growth rate and th

Effects of NH3 on the growth rate and the surface morphology of GaAs in chloride VPE

✍ Ryuji Kobayashi; Takuji Okahisa; Masaki Shiozaki; Fumio Hasegawa 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 842 KB

MOVPE Growth of High Quality Cubic GaN o

MOVPE Growth of High Quality Cubic GaN on GaAs: The Role of Growth Rates

✍ Funato, M. ;Ogawa, M. ;Ishido, T. ;Fujita, Sz. ;Fujita, Sg. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 111 KB 👁 2 views

Studies on the Growth Rates of Crystals

✍ R. Dhanasekaran; P. Ramasamy 📂 Article 📅 1981 🏛 John Wiley and Sons 🌐 English ⚖ 259 KB 👁 2 views

Polarity Inversion during Halide VPE Gro

Polarity Inversion during Halide VPE Growth of GaN on GaAs(111)B-As Surface at High Temperatures

✍ Hasegawa, F. ;Namerikawa, M. ;Takahashi, O. ;Souda, R. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 104 KB 👁 2 views

First-Principle Theoretical Study on Epi

First-Principle Theoretical Study on Epitaxial Crystal Growth of GaN

✍ Murata, S. ;Ikenaga, M. ;Nakamura, K. ;Tachibana, A. ;Matsumoto, K. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 102 KB 👁 2 views

Computed Growth Rates of (001) GaN Subst

Computed Growth Rates of (001) GaN Substrates in the Hydride Vapour Phase Method

✍ Cadoret, R. ;Trassoudaine, A. ;Aujol, E. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 84 KB 👁 1 views

A theoretical model developed to account for the (001) GaN growth by hydride vapour phase epitaxy in H 2 or neutral carrier gases is applied to investigate the variation of the growth rate with the temperature and input partial pressure of GaCl. The curves computed by taking into account the mass tr