Computed Growth Rates of (001) GaN Substrates in the Hydride Vapour Phase Method
✍ Scribed by Cadoret, R. ;Trassoudaine, A. ;Aujol, E.
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 84 KB
- Volume
- 183
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
A theoretical model developed to account for the (001) GaN growth by hydride vapour phase epitaxy in H 2 or neutral carrier gases is applied to investigate the variation of the growth rate with the temperature and input partial pressure of GaCl. The curves computed by taking into account the mass transfer and GaN parasitical depositions illustrate the possibilities of the model in analysing and predicting the experimental results, other than the deposition obtained in N 2 /H 2 mixtures without parasitical nucleation at very negative supersaturation values, which seems to indicate a third chlorine desorption mechanism.