Porous silicon (PSi) samples were prepared by electrochemical etching of silicon-on-insulator wafers, consisting of 45 m thick p-type (111) silicon epitaxial layer grown on a thin 100 nm SiO 2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxi
Study on structural properties of epitaxial silicon films on annealed double layer porous silicon
β Scribed by Zhihao Yue; Honglie Shen; Hong Cai; Hongjie Lv; Bin Liu
- Book ID
- 113850030
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 456 KB
- Volume
- 407
- Category
- Article
- ISSN
- 0921-4526
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Silicon-on insulator (SOI) wafers, consisting of 22 lm thick p-type silicon epitaxial layer grown on 280 lm thick n-type (1 1 1) silicon substrate, were electrochemically etched in hydrofluoric acid (HF) to produce porous silicon (PS) samples. The pores of different size and different depth were obt
The electrical conduction properties of a heterostructure based on a stacked double-layer porous silicon structure have been investigated. Two layers of porous silicon (PS) with different porosities were inserted in an Au/PS/p:Si/Al structure. Transport properties of this structure have been investi