Electrical properties study of double porous silicon layers: Conduction mechanisms

✍ Scribed by R. Jemai; A. Alaya; O. Meskini; M. Nouiri; R. Mghaieth; K. Khirouni; S. Alaya

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 394 KB
• Volume: 137
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2006.12.003

✦ Synopsis

The electrical conduction properties of a heterostructure based on a stacked double-layer porous silicon structure have been investigated. Two layers of porous silicon (PS) with different porosities were inserted in an Au/PS/p:Si/Al structure. Transport properties of this structure have been investigated by current-voltage (I-V) and admittance spectroscopy measurements. From I-V characteristics and the band diagram of the structure, it was concluded that tunneling current is prevailing at low forward polarization. The temperature dependence of the conductance shows the existence of a hopping conduction in the PS layer.